REACTOR FOR DEPOSITING POLYCRYSTALLINE SILICON

The yield and quality of polysilicon rods produced in the Siemens process are increased by preventing pieces of silicon too large to be removed by flushing with gas from entering reaction gas inlets and offgas outlets by means of protective elements installed in the inlets and/or outlets.

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Bibliographische Detailangaben
Hauptverfasser:	KUTZA, Christian, KRAUS, Heinz
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The yield and quality of polysilicon rods produced in the Siemens process are increased by preventing pieces of silicon too large to be removed by flushing with gas from entering reaction gas inlets and offgas outlets by means of protective elements installed in the inlets and/or outlets.