MEMORY SUBSYSTEM IN CNN BASED DIGITAL IC FOR ARTIFICIAL INTELLIGENCE

CNN (Cellular Neural Networks or Cellular Nonlinear Networks) based digital Integrated Circuit for artificial intelligence contains multiple CNN processing units. Each CNN processing unit contains CNN logic circuits operatively coupling to a memory subsystem having first and second memories. The first memory contains magnetic random access memory (MRAM) cells for storing weights (e.g., filter coefficients) while the second memory is for storing input signals (e.g., imagery data). The first memory may store one-time-programming weights. The memory subsystem may contain a third memory that contains MRAM cells for storing one-time-programming data for security purpose. The second memory contains MRAM cells or static random access memory cells. Each MRAM cell contains a Spin-Orbit-Torque (SOT) based magnetic tunnel junction (MTJ) element.