SEMICONDUCTOR CAPACITOR AND POWER SUPPLY MODULE

A semiconductor capacitor includes a semiconductor substrate having a first and second principal surfaces. A first set of one or more trenches is formed on the first principal surface and a second set of one or more trenches formed on the second principal surface. A first dielectric film is located on the first principal surface and least inner walls of the first set of one or more trenches. A second dielectric film is located on the second principal surface and least inner walls of the second set of one or more trenches. A first conductor film located on the first dielectric film. A second conductor film located on the second dielectric film. The semiconductor substrate is formed of Si, SiC, GaN, or the like. The dielectric film has a two-layer structure of SiO2 and Si3N4.