Pattern Formation Method

A pattern formation method includes forming a first pattern in a first film in a first region and forming a second pattern in the first film in a second region by using an optical lithography technology. The pattern formation method also includes forming a third pattern corresponding to the first pa...

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Bibliographische Detailangaben
Hauptverfasser:	Kasahara, Yusuke, Kondoh, Takehiro, KAWANISHI, Ayako
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A pattern formation method includes forming a first pattern in a first film in a first region and forming a second pattern in the first film in a second region by using an optical lithography technology. The pattern formation method also includes forming a third pattern corresponding to the first pattern in a second film below the first film in the first region by using a self-organization lithography technology. The pattern formation method also includes transferring the third pattern to a third film below the first film and the second film in the first region and transferring the second pattern to the third film in the second region.