METHOD OF FABRICATION FOR SINGLE CRYSTAL PIEZOELECTRIC RF RESONATORS AND FILTERS

The invention relates to a method for manufacturing a filter containing single-crystal piezoelectric radio-frequency (RF) resonators. The method comprises the following steps: acquiring one removablecarrier with a releasing layer; manufacturing a piezoelectric film on the releasing layer; depositing...

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Bibliographische Detailangaben
1. Verfasser:	Hurwitz, Dror
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING GENERATION OF NOISE BY SUCH CIRCUITS GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS RESONATORS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The invention relates to a method for manufacturing a filter containing single-crystal piezoelectric radio-frequency (RF) resonators. The method comprises the following steps: acquiring one removablecarrier with a releasing layer; manufacturing a piezoelectric film on the releasing layer; depositing a first electrode layer on the piezoelectric film; manufacturing a back film on a silicon cover; attaching a wafer back film onto an electrode; separating the removable carrier; necessarily measuring piezoelectricity and modification; selectively corroding the piezoelectric film to form an island;corroding a coating and a silicon crystal film in order to form SiO2; coating a passivation layer above a corrosive groove and around and above a piezoelectric island; applying a top electrode; adding a coupler used for connecting an adapter plate; selectively removing electrode material in order to leave out coupled resonators; manufacturing a gasket; peeling the silicon cover; manufacturing a cavity in SOI (otherwise using the SOI having the cavity); cutting; acquiring the adapter plate; manufacturing an epoxy resin dam structure; and connecting the resonators onto a substrate of the adapter plate (a flip-chip); encapsulation and separation.