CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME

An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of a...

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Bibliographische Detailangaben
Hauptverfasser:	SAKURADA, Takashi, KAWASE, Tomohiro
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMISTRY CONDUCTORS CRYSTAL GROWTH ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INSULATORS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TREATMENT OF ALLOYS OR NON-FERROUS METALS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.