METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In a method of manufacturing a semiconductor device, a Schottky electrode is formed on an upper surface of a semiconductor substrate. A second region of the semiconductor substrate is etched such that a first region becomes higher than a second region, a rising surface is formed between the first and second regions, and an outer peripheral edge of the Schottky electrode is located on the first region. An insulating film is formed on the upper surface of the semiconductor substrate such that the insulating film annularly extends along the rising surface. A field plate electrode is formed. The field plate electrode is electrically connected with the Schottky electrode and faces the upper surface of the semiconductor substrate via the insulating film within an area extending from the outer peripheral edge of the Schottky electrode to the second region over the rising surface.