DEVICE ALIGNMENT MARK USING A PLANARIZATION PROCESS

Device and methods of forming a device are disclosed. The method includes providing a substrate and forming a dielectric layer over the substrate. An alignment mark opening which extends through the dielectric layer is formed. A conductive layer is deposited over the dielectric layer. A planarization process is performed to remove excess conductive material on the dielectric layer and recess a top surface of the conductive material in the alignment mark opening with respect to the dielectric layer, forming an alignment mark of the device. A first electrode layer may be formed over the dielectric layer, wherein a topography of the dielectric layer and the alignment mark in the dielectric layer is transferred to the first electrode layer.