Semiconductor Device with Different Gate Trenches

A semiconductor device includes a first trench and a second trench in a first main surface of a semiconductor substrate. Each of the first and second trenches includes first sections extending lengthwise in a first direction and a second section extending lengthwise in a second direction transvers to the first direction, the second section of the first trench being disposed opposite to the second section of the second trench. The semiconductor device further includes a semiconductor mesa separating the first and second trenches, and a source metal layer above the first main surface of the semiconductor substrate and electrically connected to source regions in the semiconductor mesa. Corresponding methods of manufacture are also described.