METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device includes forming transistors in a cell region of a test wafer, forming a first test pattern on a first test cell in the cell region, the first test pattern being electrically connected to the transistors, and scanning the first test pattern using an e...

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Bibliographische Detailangaben
Hauptverfasser:	Oh, Sang-Kyu, WON, HYOSIG, Jeong, Kwangok, Oh, Sungmin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method of manufacturing a semiconductor device includes forming transistors in a cell region of a test wafer, forming a first test pattern on a first test cell in the cell region, the first test pattern being electrically connected to the transistors, and scanning the first test pattern using an electron beam. Forming the transistors in the cell region includes patterning an upper portion of the test wafer to form active patterns, forming source/drain regions on the active patterns, forming gate electrodes extending across the active patterns, forming active contacts coupled to the source/drain regions, and forming gate contacts coupled to the gate electrodes.