SEMICONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and th...

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Bibliographische Detailangaben
Hauptverfasser: TSAI, SHANG-YING, CHANG, KUEI-SUNG, HSIEH, CHENG-YU, LIU, YENNG
Format: Patent
Sprache:eng
Schlagworte:
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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Beschreibung
Zusammenfassung:A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.