PHOTOELECTRODE, METHOD FOR PRODUCING SAME AND PHOTOELECTROCHEMICAL CELL

A photoelectrode (120) of the present disclosure includes: a substrate (121); a ZnO conductive film (122) which is provided on the substrate (121) and in which Zn is partially substituted by at least one element selected from Ga and Al; and a semiconductor film (123) which is provided on an opposite...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HATO, Kazuhito, NOMURA, Takaiki, ITO, Takahiro
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A photoelectrode (120) of the present disclosure includes: a substrate (121); a ZnO conductive film (122) which is provided on the substrate (121) and in which Zn is partially substituted by at least one element selected from Ga and Al; and a semiconductor film (123) which is provided on an opposite side of the substrate (121) with respect to the ZnO conductive film (122) and which is composed of a nitride or an oxynitride of at least one metal element selected from metal elements of groups 4A, 5A, 6A, and 3B.