SEMICONDUCTOR DEVICE, MECHANICAL QUANTITY MEASURING DEVICE, AND SEMICONDUCTOR DEVICE FABRICATING METHOD

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first lay...

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Bibliographische Detailangaben
Hauptverfasser:	TERADA, Daisuke, SOMA, Atsuo, SHIBATA, Mizuki, ONUKI, Hiroshi, ISHIHARA, Shosaku, ONOZUKA, Junji, SHIMOKAWA, Hanae
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.