SHORTING BAR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TRANSISTOR SUBSTRATE

SHORTING BAR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TRANSISTOR SUBSTRATE

The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe...

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Hauptverfasser: Wang, Yong, Seop, Cheong Yo, Joo, Jaeyoung, Xie, Zongtian, Yu, Yang, Tang, Cundui, Wu, Huailiang, Jiang, Zengyang, Guo, Hongyan
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Wang, Yong
Seop, Cheong Yo
Joo, Jaeyoung
Xie, Zongtian
Yu, Yang
Tang, Cundui
Wu, Huailiang
Jiang, Zengyang
Guo, Hongyan
description The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SHORTING BAR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TRANSISTOR SUBSTRATE
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