SHORTING BAR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TRANSISTOR SUBSTRATE

SHORTING BAR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TRANSISTOR SUBSTRATE

The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Wang, Yong, Seop, Cheong Yo, Joo, Jaeyoung, Xie, Zongtian, Yu, Yang, Tang, Cundui, Wu, Huailiang, Jiang, Zengyang, Guo, Hongyan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.