FET BASED SENSORY SYSTEMS

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor te...

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Bibliographische Detailangaben
Hauptverfasser:	Vossough, Kris, Yazdani, Farhang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GYROSCOPIC INSTRUMENTS INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS MEASURING MEASURING DISTANCES, LEVELS OR BEARINGS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY NAVIGATION PERFORMING OPERATIONS PHOTOGRAMMETRY OR VIDEOGRAMMETRY PHYSICS PUBLIC ADDRESS SYSTEMS SEMICONDUCTOR DEVICES SURVEYING TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.