THIN-FILM CAPACITOR MANUFACTURING METHOD, INTEGRATED CIRCUIT MOUNTING SUBSTRATE, AND SEMICONDUCTOR DEVICE EQUIPPED WITH THE SUBSTRATE
A method for manufacturing a thin-film capacitor in a circuit substrate includes: forming, on a dielectric film formed on a surface of a support member, a first electrode layer of the thin-film capacitor; forming, on the dielectric film and the first electrode layer, an insulating base material of t...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method for manufacturing a thin-film capacitor in a circuit substrate includes: forming, on a dielectric film formed on a surface of a support member, a first electrode layer of the thin-film capacitor; forming, on the dielectric film and the first electrode layer, an insulating base material of the circuit substrate so as to bury the first electrode layer; removing the support member and exposing a surface of the dielectric film on a side opposite to the first electrode layer; patterning the dielectric film so as to leave a dielectric layer overlapping the first electrode layer; forming a first through hole in the dielectric layer so as to expose a part of a surface, on a dielectric layer side, of the first electrode layer; and forming a second electrode layer of the capacitor so as to overlap the dielectric layer including the inside of the first through hole. |
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