NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
A nonvolatile semiconductor storage device having a control gate formed on a semiconductor substrate and including a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A nonvolatile semiconductor storage device having a control gate formed on a semiconductor substrate and including a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film includes a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film. |
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