PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE ELECTRODE

The present invention provides a method for producing a semiconductor device electrode, the method including the steps of: forming a first thin-film including a first metal on a substrate containing Si; forming a second thin-film including a compound of a second metal on the first thin-film; and per...

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Bibliographische Detailangaben
Hauptverfasser:	OHMI, Shunichiro, MASAHIRO, Yasushi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a method for producing a semiconductor device electrode, the method including the steps of: forming a first thin-film including a first metal on a substrate containing Si; forming a second thin-film including a compound of a second metal on the first thin-film; and performing a heat treatment to form an electrode including a silicide of the first metal, and is characterized in that hafnium (Hf) is applied as the second metal. HfN, HfW, HfB or the like is suitable as the compound of the second metal. The present invention can effectively suppress oxidation of a metal thin-film to be silicified, in formation of a silicide electrode on a silicon substrate.