SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER AND METHOD OF MAKING THE SAME
A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD)....
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| creator | SHIH, Yu-Lung CHANG, C. C KUO, Alan LIN, Yi-An LI, Chao-Keng |
| description | A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER AND METHOD OF MAKING THE SAME |
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