SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER AND METHOD OF MAKING THE SAME

SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER AND METHOD OF MAKING THE SAME

A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD)....

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Bibliographische Detailangaben
Hauptverfasser: SHIH, Yu-Lung, CHANG, C. C, KUO, Alan, LIN, Yi-An, LI, Chao-Keng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.