SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semico...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Cho, Chang Hyun Kim, Ji Young Lee, Ho Ouk Choi, Ji Min Lee, Dong Ryul |
description | A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018166352A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018166352A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018166352A13</originalsourceid><addsrcrecordid>eNqNjDELwjAQRrs4iPofDpwF22JxPZOLOTCJNNeCUyklTqKF-v-xg-5Ob3jv-5bZEMmxCl43SkINmlpWBBZb9mdAkJq8siC3K_0cx3BB4eDB8MUBeg2OxAYNZj4weKpZzX6eiyWI6GidLe79Y0qbL1fZ1pAou0vjq0vT2A_pmd5dE4t9fsyrqjwUmJf_VR-4KzS7</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME</title><source>esp@cenet</source><creator>Cho, Chang Hyun ; Kim, Ji Young ; Lee, Ho Ouk ; Choi, Ji Min ; Lee, Dong Ryul</creator><creatorcontrib>Cho, Chang Hyun ; Kim, Ji Young ; Lee, Ho Ouk ; Choi, Ji Min ; Lee, Dong Ryul</creatorcontrib><description>A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180614&DB=EPODOC&CC=US&NR=2018166352A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180614&DB=EPODOC&CC=US&NR=2018166352A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cho, Chang Hyun</creatorcontrib><creatorcontrib>Kim, Ji Young</creatorcontrib><creatorcontrib>Lee, Ho Ouk</creatorcontrib><creatorcontrib>Choi, Ji Min</creatorcontrib><creatorcontrib>Lee, Dong Ryul</creatorcontrib><title>SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME</title><description>A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDELwjAQRrs4iPofDpwF22JxPZOLOTCJNNeCUyklTqKF-v-xg-5Ob3jv-5bZEMmxCl43SkINmlpWBBZb9mdAkJq8siC3K_0cx3BB4eDB8MUBeg2OxAYNZj4weKpZzX6eiyWI6GidLe79Y0qbL1fZ1pAou0vjq0vT2A_pmd5dE4t9fsyrqjwUmJf_VR-4KzS7</recordid><startdate>20180614</startdate><enddate>20180614</enddate><creator>Cho, Chang Hyun</creator><creator>Kim, Ji Young</creator><creator>Lee, Ho Ouk</creator><creator>Choi, Ji Min</creator><creator>Lee, Dong Ryul</creator><scope>EVB</scope></search><sort><creationdate>20180614</creationdate><title>SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME</title><author>Cho, Chang Hyun ; Kim, Ji Young ; Lee, Ho Ouk ; Choi, Ji Min ; Lee, Dong Ryul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018166352A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Cho, Chang Hyun</creatorcontrib><creatorcontrib>Kim, Ji Young</creatorcontrib><creatorcontrib>Lee, Ho Ouk</creatorcontrib><creatorcontrib>Choi, Ji Min</creatorcontrib><creatorcontrib>Lee, Dong Ryul</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cho, Chang Hyun</au><au>Kim, Ji Young</au><au>Lee, Ho Ouk</au><au>Choi, Ji Min</au><au>Lee, Dong Ryul</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME</title><date>2018-06-14</date><risdate>2018</risdate><abstract>A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2018166352A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T06%3A28%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Cho,%20Chang%20Hyun&rft.date=2018-06-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018166352A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |