SEMICONDUCTOR DEVICE HAVING A TRENCH TYPE DEVICE ISOLATION FILM AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semico...

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Bibliographische Detailangaben
Hauptverfasser: Cho, Chang Hyun, Kim, Ji Young, Lee, Ho Ouk, Choi, Ji Min, Lee, Dong Ryul
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.