SELF-ALIGNED TRENCH ISOLATION IN INTEGRATED CIRCUITS

A method for fabricating an integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate is described herein. The trench is self-aligned between the first and second devices and comprises a first portion filled with a dielectric material and a second...

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Bibliographische Detailangaben
Hauptverfasser: Ohtsuka, Kenichi, LU, Ching-Huang, Xue, Lei, Chan, Simon Siu-Sing, Sugino, Rinji
Format: Patent
Sprache:eng
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Zusammenfassung:A method for fabricating an integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate is described herein. The trench is self-aligned between the first and second devices and comprises a first portion filled with a dielectric material and a second portion filled with a conductive material. The self-aligned placement of the buried trench provides electrical isolation between the first and second devices and allows for higher packing density without negatively affecting the operation of closely spaced devices in a high density IC.