SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY UNIT

A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode...

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Bibliographische Detailangaben
1. Verfasser: MURAI, Atsuhito
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over the second semiconductor layer, the second gate electrode facing the second semiconductor layer.