METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

A transparent electrode is formed on a region for forming a reflective electrode later on the p-type layer. Subsequently, a part of the surface of the p-type layer is dry etched to expose the n-type layer. On the p-type layer and the n-type layer exposed in the previous step, a resist layer with an opening is formed through photolithography. The opening has a pattern in which the center of the transparent electrode is exposed and the ends of the opening are covered with the resist layer. Next, the transparent electrode is wet etched. A reflective film is formed on the p-type layer and the resist layer, to remove the resist layer. Thus, only the reflective film on the p-type layer is left to form a reflective electrode. Then, a cover metal layer is continuously formed over the reflective electrode and the transparent electrode.