POST SPACER SELF-ALIGNED CUTS

The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LAW, Shao Beng, ZHANG, Xunyuan, SUN, Lei, BEIQUE, Genevieve, MONT, Frank W
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.