GAS BARRIER FILM, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE

The present invention is: a gas barrier film comprising a base film and a gas barrier layer formed by modifying a layer containing a polysilazane-based compound and formed on the base film, wherein the gas barrier film has a water vapor transmission rate of 0.100 g/(m2·day) or less, and an amount of...

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Bibliographische Detailangaben
Hauptverfasser: SUZUKI, Yuta, IWAYA, Wataru
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention is: a gas barrier film comprising a base film and a gas barrier layer formed by modifying a layer containing a polysilazane-based compound and formed on the base film, wherein the gas barrier film has a water vapor transmission rate of 0.100 g/(m2·day) or less, and an amount of hydrogen gas released from the gas barrier layer under an argon gas atmosphere at 60° C. and a relative humidity of 90% is 5.5 μg or less per cm2 of the gas barrier film; an electronic device member comprising the gas barrier film; and an electronic device comprising this electronic device member. The present invention provides a gas barrier film having a gas barrier layer which has excellent gas barrier properties and has less outgases generation, an electronic device member comprising the gas barrier film, and an electronic device comprising the electronic device member.