SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate, a body region disposed in the semiconductor substrate within the doped isolation barrier and in which a channel is formed during operation, an isolation contact disposed at the semiconduct...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lin, Xin, Zuo, Jiang-Kai, Yang, Hongning, Zhu, Ronghua
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate, a body region disposed in the semiconductor substrate within the doped isolation barrier and in which a channel is formed during operation, an isolation contact disposed at the semiconductor substrate and to which a voltage is applied during operation, and a plurality of reduced surface field (RESURF) layers disposed in the semiconductor substrate, the plurality of reduced surface field (RESURF) layers being arranged in a stack between the body region and the isolation contact.