BOTTOM-UP FILL (BUF) OF METAL FEATURES FOR SEMICONDUCTOR STRUCTURES

BOTTOM-UP FILL (BUF) OF METAL FEATURES FOR SEMICONDUCTOR STRUCTURES

Bottom-up fill approaches for forming metal features of semiconductor structures, and the resulting structures, are described. In an example, a semiconductor structure includes a trench disposed in an inter-layer dielectric (ILD) layer. The trench has sidewalls, a bottom and a top. A U-shaped metal...

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Bibliographische Detailangaben
Hauptverfasser: CLENDENNING, Scott B, KLOSTER, Grant M, FRASURE, Kent N, MITAN, Martin M, GLASSMAN, Timothy E, GSTREIN, Florian, GRIGGIO, Flavio, HOURANI, Rami
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Bottom-up fill approaches for forming metal features of semiconductor structures, and the resulting structures, are described. In an example, a semiconductor structure includes a trench disposed in an inter-layer dielectric (ILD) layer. The trench has sidewalls, a bottom and a top. A U-shaped metal seed layer is disposed at the bottom of the trench and along the sidewalls of the trench but substantially below the top of the trench. A metal fill layer is disposed on the U-shaped metal seed layer and fills the trench to the top of the trench. The metal fill layer is in direct contact with dielectric material of the ILD layer along portions of the sidewalls of the trench above the U-shaped metal seed layer.