POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Falck, Elmar, Brandenburg, Jens, Schulze, Hans-Joachim, Bauer, Josef-Georg
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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