POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least one power cell being configured to conduct a load current between said terminals and to block a blocking voltage applied between said terminals; an edge that laterally terminates the semiconductor body; and a non-active termination structure arranged in between the edge and the active region. The termination structure comprises: at least one doped semiconductor region implemented in the semiconductor body; a conductor structure, and an ohmic path that electrically couples the conductor structure with an electrical potential of the first load terminal.