POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least on...

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Hauptverfasser: Falck, Elmar, Brandenburg, Jens, Schulze, Hans-Joachim, Bauer, Josef-Georg
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Falck, Elmar
Brandenburg, Jens
Schulze, Hans-Joachim
Bauer, Josef-Georg
description A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least one power cell being configured to conduct a load current between said terminals and to block a blocking voltage applied between said terminals; an edge that laterally terminates the semiconductor body; and a non-active termination structure arranged in between the edge and the active region. The termination structure comprises: at least one doped semiconductor region implemented in the semiconductor body; a conductor structure, and an ohmic path that electrically couples the conductor structure with an electrical potential of the first load terminal.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE
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