SEMICONDUCTOR DEVICE

A semiconductor memory device may include first to fourth data storage regions. The semiconductor memory device may include a first to fourth capacitor groups and a voltage-generating circuit. The first capacitor group may be arranged adjacent to the first data storage region to provide the first data storage region with a first stabilizing voltage. The second capacitor group may be arranged adjacent to the second data storage region to provide the second data storage region with a second stabilizing voltage. The third capacitor group may be arranged adjacent to the third data storage region to provide the third data storage region with a third stabilizing voltage. The fourth capacitor group may be arranged adjacent to the fourth data storage region to provide the fourth data storage region with a fourth stabilizing voltage. The voltage-generating circuit may be configured to provide the first to fourth capacitor groups with an internal voltage.