METHOD OF FABRICATING X-RAY ABSORBERS FOR LOWENERGYX-RAY SPECTROSCOPY

A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask....

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Bibliographische Detailangaben
Hauptverfasser:	STEVENSON THOMAS R, NAGLER PETER C, DENIS KEVIN L, SADLEIR JOHN E, BALVIN MANUEL A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.