ELECTRONIC DEVICE INCLUDING TOPOLOGICAL INSULATOR AND TRANSITION METAL OXIDE

ELECTRONIC DEVICE INCLUDING TOPOLOGICAL INSULATOR AND TRANSITION METAL OXIDE

An electronic device may include a topological insulating layer including first and second surfaces facing each other and a transition metal oxide layer provided on the first surface of the topological insulating layer. The topological insulating layer may have a thickness ranging from 1 nm to 10 nm...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KO DaeHong, KIM TaeHyeon, JEONG KwangSik, CHO MannHo, LIM DongHyeok
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An electronic device may include a topological insulating layer including first and second surfaces facing each other and a transition metal oxide layer provided on the first surface of the topological insulating layer. The topological insulating layer may have a thickness ranging from 1 nm to 10 nm.