SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor memory device includes first to third conductive layers extending along a first direction, and a memory portion. A portion of the second conductive layer is provided between the third conductive layer and a portion of the first conductive layer. The first...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KATO Hisashi, YAMAMOTO Naoki, INOKUMA Hideki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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