SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor memory device includes first to third conductive layers extending along a first direction, and a memory portion. A portion of the second conductive layer is provided between the third conductive layer and a portion of the first conductive layer. The first...

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Bibliographische Detailangaben
Hauptverfasser:	KATO Hisashi, YAMAMOTO Naoki, INOKUMA Hideki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to one embodiment, a semiconductor memory device includes first to third conductive layers extending along a first direction, and a memory portion. A portion of the second conductive layer is provided between the third conductive layer and a portion of the first conductive layer. The first conductive layer includes a first end portion crossing the first direction. The second conductive layer includes a second end portion crossing the first direction. The third conductive layer includes a third end portion crossing the first direction. A position in the first direction of a portion of the second end portion is between a position of the first end portion and a position of the third end portion. The position in the first direction of the portion of the second end portion is between a position of another portion of the second end portion and the position of the third end portion.