HIGH PLANARIZATION EFFICIENCY CHEMICAL MECHANICAL POLISHING PADS AND METHODS OF MAKING

HIGH PLANARIZATION EFFICIENCY CHEMICAL MECHANICAL POLISHING PADS AND METHODS OF MAKING

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mastroianni Sarah E, Islam Mohammad T, Weis Jonathan G, Xu Wenjun, Chiou Nan-Rong, Jacob George C, Kumar Bhawesh
Format: Patent
Sprache:eng
Schlagworte:
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Beschreibung
Zusammenfassung:A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.