MONITORING OF POLISHING PAD THICKNESS FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ pol...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Lee Harry Q, Brown Brian J, McClintock William H, Tu Wen-Chiang, Lu Wei, Zhang Jimin, Wang Zhihong
Format:	Patent
Sprache:	eng
Schlagworte:	DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PERFORMING OPERATIONS PHYSICS POLISHING TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad, and a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner.