METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device according to an embodiment of the present invention includes steps of forming an AlN layer on a SiC substrate under conditions of a growth temperature of 1100° C. or lower, growth pressure of 100 torr or less and a V/III ratio of source gasses of 500...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Nakata Ken, Kouchi Tsuyoshi, Ichikawa Hiroyuki, Yui Keiichi, Makabe Isao
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor device according to an embodiment of the present invention includes steps of forming an AlN layer on a SiC substrate under conditions of a growth temperature of 1100° C. or lower, growth pressure of 100 torr or less and a V/III ratio of source gasses of 500 or less, forming a channel layer made of a nitride semiconductor, forming an electron supply layer, and forming gate, source, and drain electrodes.