METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

A method for manufacturing a semiconductor substrate according to the present invention includes a hydrogen layer forming step of forming a hydrogen layer on a first substrate formed of single crystal of a first semiconductor material, a bonding step of bonding the first substrate and a temporary su...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SHIMADA Tadashi, KATO Mitsuharu, USAMI Tamotsu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A method for manufacturing a semiconductor substrate according to the present invention includes a hydrogen layer forming step of forming a hydrogen layer on a first substrate formed of single crystal of a first semiconductor material, a bonding step of bonding the first substrate and a temporary substrate, a first separation step of separating the first substrate with the hydrogen layer as a boundary and leaving a separated surface side of the first substrate as a first thin film layer on the temporary substrate, a support layer forming step of forming a support layer formed of a second semiconductor material on the temporary substrate on which the first thin film layer is left, a second separation step of removing the temporary substrate, and a cutting step of cutting a peripheral edge portion of the substrate.