SWITCHED CAPACITOR CIRCUIT STRUCTURE WITH METHOD OF CONTROLLING SOURCE-DRAIN RESISTANCE ACROSS SAME

SWITCHED CAPACITOR CIRCUIT STRUCTURE WITH METHOD OF CONTROLLING SOURCE-DRAIN RESISTANCE ACROSS SAME

Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhang Chi, Balasubramaniyan Arul
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERATION OF NOISE BY SUCH CIRCUITS
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER
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Beschreibung
Zusammenfassung:Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.