SEMICONDUCTOR DEVICE HAVING NON-ORTHOGONAL ELEMENT

The present disclosure provides a device includes a first gate structure segment and a collinear second gate structure segment, as well as a third gate structure segment and a collinear fourth gate structure segment. An interconnection extends from the first gate structure segment to the fourth gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YEH Shiao-Chian, CHEN Kuei-Shun, WU Hong-Jang, LIU Chia-Chu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure provides a device includes a first gate structure segment and a collinear second gate structure segment, as well as a third gate structure segment and a collinear fourth gate structure segment. An interconnection extends from the first gate structure segment to the fourth gate structure segment. The interconnection is disposed above the first gate structure segment and the fourth gate structure segment. The interconnection may be formed on or co-planar with a contact layer of the semiconductor device.