APPARATUS AND METHOD FOR LOW POWER LOW LATENCY HIGH CAPACITY STORAGE CLASS MEMORY

A method and a storage system are provided for implementing enhanced solid state storage class memory (eSCM) including a direct attached dual in line memory (DIMM) card containing Dynamic Random Access Memory (DRAM), and at least one 5 non-volatile memory, for example, Phase Change Memory (PCM), Res...

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Hauptverfasser: FRANCA-NETO Luiz M, CHU Frank R, TSAI Timothy K, WANG Qingbo
Format: Patent
Sprache:eng
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Zusammenfassung:A method and a storage system are provided for implementing enhanced solid state storage class memory (eSCM) including a direct attached dual in line memory (DIMM) card containing Dynamic Random Access Memory (DRAM), and at least one 5 non-volatile memory, for example, Phase Change Memory (PCM), Resistive RAM (ReRAM), Spin-Transfer-Torque RAM (STT-RAM), and NAND Flash chips. An eSCM processor controls selectively allocating data among the DRAM, and the at least one non-volatile memory primarily based upon a data set size.