METHOD OF ANALYZING LATTICE STRAIN OF SEMICONDUCTOR DEVICE

METHOD OF ANALYZING LATTICE STRAIN OF SEMICONDUCTOR DEVICE

A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BYUN GWANG-SEON, KWAK HYUN-KOO, SHON SU-BONG, PARK HAN-SAEM, CHO UNG-KEUN, AHN MYOUNG-KI
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
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Beschreibung
Zusammenfassung:A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image, and generating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image.