LONG CHANNEL AND SHORT CHANNEL VERTICAL FET CO-INTEGRATION FOR VERTICAL FET VTFET

LONG CHANNEL AND SHORT CHANNEL VERTICAL FET CO-INTEGRATION FOR VERTICAL FET VTFET

A semiconductor and a method of forming a semiconductor on a single chip, including forming a shallow trench isolation (STI) region on a short channel device and a long channel device, forming at least two vertical fins connected in the long channel device, and forming contacts on a source and drain...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Peterson Kirk David, Hook Terence B, Li Baozhen, Wang Junli
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor and a method of forming a semiconductor on a single chip, including forming a shallow trench isolation (STI) region on a short channel device and a long channel device, forming at least two vertical fins connected in the long channel device, and forming contacts on a source and drain regions for the long channel device and short channel device, wherein the contacts connect a top surface of the source or drain region for series FET (Field-Effect Transistor) connection for the long channel device.