SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER

SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER

Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to have a surface comprising closely spaced tips extending from the surface, depositing a group-IIIB silicide layer on the tips, then depositing a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: THAPA Sarad Bahadur, ZOELLNER Marvin, HAEBERLEN Maik, SCHROEDER Thomas
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to have a surface comprising closely spaced tips extending from the surface, depositing a group-IIIB silicide layer on the tips, then depositing a group-IIIB nitride layer, and then depositing a group-IIIA nitride.