Reconfigurable MOS Varactor
Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor area of a second conductivity type, different from the first conductivity type, within the semiconductor substrate; a field effect transistor (...
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| creator | Sun Pinping Pei Chengwen Xiu Kai |
| description | Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor area of a second conductivity type, different from the first conductivity type, within the semiconductor substrate; a field effect transistor (FET) structure within the semiconductor area; and a contact, contacting the semiconductor area, for applying a voltage bias to the semiconductor area. |
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a field effect transistor (FET) structure within the semiconductor area; and a contact, contacting the semiconductor area, for applying a voltage bias to the semiconductor area.</description><language>eng</language><subject>AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171214&DB=EPODOC&CC=US&NR=2017358691A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171214&DB=EPODOC&CC=US&NR=2017358691A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sun Pinping</creatorcontrib><creatorcontrib>Pei Chengwen</creatorcontrib><creatorcontrib>Xiu Kai</creatorcontrib><title>Reconfigurable MOS Varactor</title><description>Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor area of a second conductivity type, different from the first conductivity type, within the semiconductor substrate; a field effect transistor (FET) structure within the semiconductor area; and a contact, contacting the semiconductor area, for applying a voltage bias to the semiconductor area.</description><subject>AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOSk3Oz0vLTC8tSkzKSVXw9Q9WCEssSkwuyS_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobmxqYWZpaGjobGxKkCAOspJCM</recordid><startdate>20171214</startdate><enddate>20171214</enddate><creator>Sun Pinping</creator><creator>Pei Chengwen</creator><creator>Xiu Kai</creator><scope>EVB</scope></search><sort><creationdate>20171214</creationdate><title>Reconfigurable MOS Varactor</title><author>Sun Pinping ; Pei Chengwen ; Xiu Kai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017358691A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Sun Pinping</creatorcontrib><creatorcontrib>Pei Chengwen</creatorcontrib><creatorcontrib>Xiu Kai</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sun Pinping</au><au>Pei Chengwen</au><au>Xiu Kai</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reconfigurable MOS Varactor</title><date>2017-12-14</date><risdate>2017</risdate><abstract>Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor area of a second conductivity type, different from the first conductivity type, within the semiconductor substrate; a field effect transistor (FET) structure within the semiconductor area; and a contact, contacting the semiconductor area, for applying a voltage bias to the semiconductor area.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Reconfigurable MOS Varactor |
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