MEMORY DEVICES CONFIGURED TO PERFORM LEAK CHECKS

MEMORY DEVICES CONFIGURED TO PERFORM LEAK CHECKS

Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a particular voltage to an unselected access line of a program operation, sensing a current of a selected a...

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Bibliographische Detailangaben
Hauptverfasser: Sinipete Joemar, Chu Chiming, Kessenich Jeffrey A, Nevill Jason L, Padilla Renato C, Marr Kenneth W
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
STATIC STORES
TESTING
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Beschreibung
Zusammenfassung:Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a particular voltage to an unselected access line of a program operation, sensing a current of a selected access line of the program operation while applying the particular voltage to the unselected access line, indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current, and proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.